IPB60R040CFD7ATMA1 vs IPL60R085P7AUMA1 对比

详细并排对比 IPB60R040CFD7ATMA1 出自 Infineon 和 IPL60R085P7AUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 ✓ 量产中
Infineon
IPL60R085P7AUMA1 IPL60R085P7AUMA1 - 600V 85mΩ CoolMOS P7 MOSFET | Infineon

IPL60R085P7AUMA1 - 600V 85mΩ CoolMOS P7 MOSFET | Infineon

IPL60R085P7AUMA1 ✓ 量产中

规格对比

参数 IPB60R040CFD7ATMA1 IPL60R085P7AUMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.19 $2.65
Manufacturer Infineon Technologies —
Product Family CoolMOS CFD7 —
Technology Superjunction (SJ) N-Channel MOSFET CoolMOS P7 superjunction (7th generation)
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc=25°C) 50 A 39 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V 40 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
功耗(TC=25°C) 227 W —
工作温度范围 -55°C to +150°C —
封装 PG-TO263-3-2 (D2PAK) PG-VSON-4 (VSON-4, source-down)
安装类型 Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode —
MSL 等级 1 —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) —
Continuous Drain Current (ID, Tc=100°C) — 24 A
Static Drain-Source On-Resistance (RDS(on)) — 85 mΩ at VGS=10 V
Gate Threshold Voltage (VGS(th)) — 3.5 V
Maximum Power Dissipation (Ptot) — 154 W
工作结温 — -40 °C to +150 °C
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
ESD Robustness (HBM) — >2 kV (all pins)
Qualification — JEDEC industrial
Polarity — N-channel

数据手册与资源

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