IPB60R280P7ATMA1 vs IPD80R750P7ATMA1 Vergleich
Detaillierter Direktvergleich von IPB60R280P7ATMA1 von Infineon und IPD80R750P7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPB60R280P7ATMA1 | IPD80R750P7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,88 | $0,42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 (600 V) | — |
| Transistortyp | N-Channel MOSFET | — |
| Technology | Superjunction (SJ) | CoolMOS (Super-Junction) |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 12 A | — |
| On-Resistance R_DS(on) max (V_GS=10V) | 280 mOhm | — |
| Gate-Source Threshold V_GS(th) typ | 3.5 V | — |
| Power Dissipation P_D (T_C=25°C) | 53 W | — |
| Gehäuse | PG-TO263-3 (D2PAK) | — |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (2 + Tab) | — |
| Betriebstemperaturbereich | -55 °C to +150 °C (T_j max) | — |
| Configuration | Single N-Channel | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Generation | 7th Gen CoolMOS (successor to P6) | — |
| Series | — | CoolMOS P7 |
| Part Number | — | IPD80R750P7ATMA1 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID) at TC=25C | — | 7 A |
| On-Resistance (RDS(on)) max at VGS=10V | — | 750 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V (typical) |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) at TC=25C | — | 51 W |
| Gehäuse / Bauform | — | PG-TO252-3 (DPAK) |
| Betriebstemperatur | — | -55C to +150C (TJ) |
| Gate Protection | — | Integrated Zener (ESD protected) |
| Packaging | — | Tape & Reel (ATMA1) |