IPB70N10S3L12ATMA1 vs IPB120P04P4L03ATMA2 Vergleich
Detaillierter Direktvergleich von IPB70N10S3L12ATMA1 von Infineon und IPB120P04P4L03ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB70N10S3L12ATMA1 - 100V 70A 11.8mΩ OptiMOS N-Ch MOSFET | Infineon
IPB70N10S3L12ATMA1 ✓ AktivInfineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ AktivSpezifikationsvergleich
| Parameter | IPB70N10S3L12ATMA1 | IPB120P04P4L03ATMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,65 | $1,74 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS (IPB70N10) | — |
| Transistortyp | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID) at TC=25°C | 70 A | — |
| Peak Drain Current (IDM) | 180 A | — |
| On-Resistance RDS(on) max at VGS=10V | 11.8 mΩ | — |
| Power Dissipation (PD) at TC=25°C | 125 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | -55C to +175C |
| Gehäuse / Bauform | PG-TO263-3-2 (D2PAK, 2 Leads + Tab) | — |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 Qualified | — |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 °C peak reflow) | — |
| RoHS / Green | RoHS Compliant, Green Product | — |
| Avalanche Tested | 100 % Avalanche Tested | — |
| Halogenfrei | Yes | — |
| Transistor Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | 120 A |
| Power Dissipation (PD, Tc=25C) | — | 136 W |
| On-Resistance (RDS(on)) | — | 3.1 mΩ (typ, per Infineon summary) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/range] |
| Gehäuse | — | PG-TO263-3-2 (D2PAK) |
| Technology Family | — | OptiMOS-P2 |
| Configuration | — | Single P-Channel MOSFET |
| Pin-Anzahl | — | 3 (Gate, Drain, Source) |
| MSL-Level | — | [DATA_NEEDED: MSL level] |
| RoHS-Status | — | Compliant (per Infineon product page) |