IPB70N10S3L12ATMA1 vs IPB120P04P4L03ATMA2 Comparación
Comparación detallada lado a lado de IPB70N10S3L12ATMA1 por Infineon y IPB120P04P4L03ATMA2 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB70N10S3L12ATMA1 - 100V 70A 11.8mΩ OptiMOS N-Ch MOSFET | Infineon
IPB70N10S3L12ATMA1 ✓ ActivoInfineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ ActivoComparación de especificaciones
| Parámetro | IPB70N10S3L12ATMA1 | IPB120P04P4L03ATMA2 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,65 | $1,74 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS (IPB70N10) | — |
| Tipo de transistor | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID) at TC=25°C | 70 A | — |
| Peak Drain Current (IDM) | 180 A | — |
| On-Resistance RDS(on) max at VGS=10V | 11.8 mΩ | — |
| Power Dissipation (PD) at TC=25°C | 125 W | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | -55C to +175C |
| Encapsulado / Carcasa | PG-TO263-3-2 (D2PAK, 2 Leads + Tab) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 Qualified | — |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 °C peak reflow) | — |
| RoHS / Green | RoHS Compliant, Green Product | — |
| Avalanche Tested | 100 % Avalanche Tested | — |
| Sin halógenos | Yes | — |
| Transistor Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | 120 A |
| Power Dissipation (PD, Tc=25C) | — | 136 W |
| On-Resistance (RDS(on)) | — | 3.1 mΩ (typ, per Infineon summary) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/range] |
| Encapsulado | — | PG-TO263-3-2 (D2PAK) |
| Technology Family | — | OptiMOS-P2 |
| Configuration | — | Single P-Channel MOSFET |
| Recuento de pines | — | 3 (Gate, Drain, Source) |
| Nivel MSL | — | [DATA_NEEDED: MSL level] |
| Estado RoHS | — | Compliant (per Infineon product page) |