IPD028N06NF2SATMA1 vs IPC50N04S5L5R5ATMA1 Vergleich
Detaillierter Direktvergleich von IPD028N06NF2SATMA1 von Infineon und IPC50N04S5L5R5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD028N06NF2SATMA1 - 60V 139A 2.85mΩ OptiMOS N-MOSFET | Infineon
IPD028N06NF2SATMA1 ✓ AktivInfineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPD028N06NF2SATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,62 | $0,36 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD028N06NF2SATMA1 | — |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Technology Family | OptiMOS 5 60V | — |
| Drain-Source Voltage (VDS) max | 60 V | — |
| Continuous Drain Current (ID) at TA=25°C | 24 A | — |
| Continuous Drain Current (ID) at TC=25°C | 139 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 2.85 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation at TA=25°C | 3 W | — |
| Power Dissipation at TC=25°C | 150 W | — |
| Betriebs-Sperrschichttemperaturbereich | -55 C to +175 C | — |
| Gehäuse | PG-TO252-3 (DPAK) | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (Gate, Drain-tab, Source) | — |
| RoHS-Status | Compliant | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| Packing | Tape & Reel (T&R) | — |
| Mode | — | Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc) | — | 50 A |
| Maximum Drain Current (silicon-limited, 25 °C) | — | 60 A |
| On-Resistance RDS(on) max @ VGS=10 V | — | 5.5 mΩ |
| Gate Threshold VGS(th) | — | Logic Level (enhancement at ≤ 4.5 V VGS) |
| Power Dissipation (Tc) | — | 42 W |
| Thermal Resistance Junction-to-Case RthJC | — | 3.6 K/W |
| Betriebstemperaturbereich | — | -55 °C to +175 °C |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| MSL (Moisture Sensitivity Level) | — | MSL1 |
| Peak Reflow Temperature | — | 260 °C |
| Avalanche Rating | — | 100 % Avalanche Tested |
| RoHS / REACH | — | RoHS Compliant (Green Product) |