IPD028N06NF2SATMA1 vs IPC50N04S5L5R5ATMA1 Comparison
Detailed side-by-side comparison of IPD028N06NF2SATMA1 by Infineon and IPC50N04S5L5R5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD028N06NF2SATMA1 - 60V 139A 2.85mΞ© OptiMOS N-MOSFET | Infineon
IPD028N06NF2SATMA1 β ActiveInfineon
IPC50N04S5L5R5ATMA1
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΞ© OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 β ActiveSpecification Comparison
| Parameter | IPD028N06NF2SATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.36 |
| Manufacturer | Infineon Technologies | β |
| Part Number | IPD028N06NF2SATMA1 | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology Family | OptiMOS 5 60V | β |
| Drain-Source Voltage (VDS) max | 60 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 24 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 139 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) typ @ VGS=10V | 2.85 mΞ© | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typ] | β |
| Power Dissipation at TA=25Β°C | 3 W | β |
| Power Dissipation at TC=25Β°C | 150 W | β |
| Operating Junction Temperature Range | -55 C to +175 C | β |
| Package | PG-TO252-3 (DPAK) | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain-tab, Source) | β |
| RoHS Status | Compliant | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Packing | Tape & Reel (T&R) | β |
| Mode | β | Enhancement Mode |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, Tc) | β | 50 A |
| Maximum Drain Current (silicon-limited, 25 Β°C) | β | 60 A |
| On-Resistance RDS(on) max @ VGS=10 V | β | 5.5 mΞ© |
| Gate Threshold VGS(th) | β | Logic Level (enhancement at β€ 4.5 V VGS) |
| Power Dissipation (Tc) | β | 42 W |
| Thermal Resistance Junction-to-Case RthJC | β | 3.6 K/W |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C |
| AEC-Q101 Qualification | β | Qualified (automotive grade) |
| MSL (Moisture Sensitivity Level) | β | MSL1 |
| Peak Reflow Temperature | β | 260 Β°C |
| Avalanche Rating | β | 100 % Avalanche Tested |
| RoHS / REACH | β | RoHS Compliant (Green Product) |