IPD031N03LGATMA1 vs IPD78CN10NGATMA1 Vergleich
Detaillierter Direktvergleich von IPD031N03LGATMA1 von Infineon und IPD78CN10NGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD031N03LGATMA1 | IPD78CN10NGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,41 | $0,78 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), OptiMOS 3 | OptiMOS 2 Power-Transistor |
| Drain-to-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ 25 °C | 90 A (Tc) | — |
| Power Dissipation (Pd) | 94 W (Tc) | — |
| RDS(on) Max @ VGS=10V | 3.1 mΩ | — |
| RDS(on) Max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ 4.5V] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/max] | — |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typical @ 10V Vgs] | — |
| Output Charge (Qoss) | Ultra low (per datasheet tagline) | — |
| Betriebstemperatur | -55 °C to +175 °C (junction) | — |
| Gehäuse | PG-TO252-3-11 (DPAK-2) | — |
| Montageart | Surface Mount | Surface Mount |
| Mounting Tab | Drain (electrically connected) | — |
| Avalanche Energy Rated | Yes (per OptiMOS 3 datasheet family) | — |
| RoHS-Status | Compliant | — |
| MSL-Level | 1 | 1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 2 |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID) at Tc=25C | — | 13 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 78 mOhm |
| Gate Threshold Voltage VGS(th) Typ | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) Max at Tc=25C | — | 31 W |
| Operating Junction Temperature Max | — | 175 C |
| Gehäuse / Bauform | — | PG-TO252-3 (DPAK) |
| Pin-Anzahl | — | 3 (Gate, Drain, Source) + Tab |
| Lead Plating | — | Pb-free (Matte Tin) |
| RoHS Compliance | — | Compliant |
| JEDEC Qualification | — | Qualified per JEDEC1 for target application |