IPD031N03LGATMA1 vs IPD78CN10NGATMA1 对比
详细并排对比 IPD031N03LGATMA1 出自 Infineon 和 IPD78CN10NGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD031N03LGATMA1 | IPD78CN10NGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.41 | $0.78 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), OptiMOS 3 | OptiMOS 2 Power-Transistor |
| Drain-to-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ 25 °C | 90 A (Tc) | — |
| Power Dissipation (Pd) | 94 W (Tc) | — |
| RDS(on) Max @ VGS=10V | 3.1 mΩ | — |
| RDS(on) Max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ 4.5V] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/max] | — |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typical @ 10V Vgs] | — |
| Output Charge (Qoss) | Ultra low (per datasheet tagline) | — |
| 工作温度 | -55 °C to +175 °C (junction) | — |
| 封装 | PG-TO252-3-11 (DPAK-2) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Mounting Tab | Drain (electrically connected) | — |
| Avalanche Energy Rated | Yes (per OptiMOS 3 datasheet family) | — |
| RoHS 状态 | Compliant | — |
| MSL 等级 | 1 | 1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 2 |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID) at Tc=25C | — | 13 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 78 mOhm |
| Gate Threshold Voltage VGS(th) Typ | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) Max at Tc=25C | — | 31 W |
| Operating Junction Temperature Max | — | 175 C |
| 封装 / 外壳 | — | PG-TO252-3 (DPAK) |
| 引脚数量 | — | 3 (Gate, Drain, Source) + Tab |
| Lead Plating | — | Pb-free (Matte Tin) |
| RoHS Compliance | — | Compliant |
| JEDEC Qualification | — | Qualified per JEDEC1 for target application |