IPD031N06L3GATMA1 vs IPG20N10S436AATMA1 Vergleich
Detaillierter Direktvergleich von IPD031N06L3GATMA1 von Infineon und IPG20N10S436AATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD031N06L3GATMA1 - 60V 100A 3.1mΩ N-Ch OptiMOS 3 MOSFET | Infineon
IPD031N06L3GATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPD031N06L3GATMA1 | IPG20N10S436AATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,68 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| Maximum Power Dissipation (PD) at TC=25°C | 167 W | — |
| RDS(on) Max at VGS=10V | 3.1 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V | — |
| Gate Drive Voltage (Max RDS(on)) | 4.5 V, 10 V | — |
| Total Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typical value] | — |
| Betriebstemperaturbereich | -55°C to +175°C | — |
| Gehäuse | PG-TO252-3 (DPAK) | PG-TDSON-8-10 (Wettable Flank) |
| Montageart | Surface Mount | Surface Mount |
| Series | OptiMOS 3 | — |
| MSL-Level | 1 (Unlimited) | MSL1 (260 C peak reflow) |
| RoHS-Status | Compliant | Compliant (Green Product) |
| Configuration | — | Dual N-Channel (2 Elements with Built-in Diode) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Total Power Dissipation (PD) | — | 43 W |
| Operating Mode | — | Enhancement Mode |
| Operating Temperature (TJ max) | — | +175 C |
| JESD-609 Code | — | e3 |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Tested | — | 100% |
| AOI Compatible | — | Yes (Wettable Flank) |
| Channel Type | — | N-Channel Normal Level |