IPD042P03L3GATMA1 vs IRFR2405TRLPBF Vergleich
Detaillierter Direktvergleich von IPD042P03L3GATMA1 von Infineon und IRFR2405TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD042P03L3GATMA1 | IRFR2405TRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,28 | $0,55 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -30 V | 55 V |
| Continuous Drain Current (ID, Tc=25°C) | -70 A | — |
| Pulsed Drain Current (IDM) | -280 A | 200 A (typical, per datasheet family) |
| RDS(on) max @ VGS = -10 V | 4.2 mΩ | — |
| RDS(on) max @ VGS = -4.5 V | [DATA_NEEDED: RDS(on) @ -4.5 V] | — |
| Gate Threshold Voltage (VGS(th)) | -1.5 V (typ) | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Total Power Dissipation (PD @ Tc=25°C) | 150 W | — |
| Single-Pulse Avalanche Energy (EAS) | 290 mJ | — |
| Betriebstemperaturbereich | -55°C to +175°C (TJ) | -55 C to +175 C (junction) |
| Gehäuse | PG-TO252-3 (DPAK) | TO-252AA (DPAK), 3-pin (2 + Tab) |
| Technology | OptiMOS™ P (Trench) | HEXFET (IR MOSFET, 7th generation) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | — |
| MSL-Level | 1 | — |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 56 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 16 mOhm |
| Gate Charge (Qg) typical | — | 70 nC |
| Power Dissipation (PD) at Tc | — | 110 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Avalanche Energy Rated | — | Yes (HEXFET ruggedized design) |
| Lead-Free / RoHS | — | Yes, PBF suffix indicates lead-free and RoHS compliant |
| Packaging | — | Tape & Reel (TR) |