IPD042P03L3GATMA1 vs IRFR2405TRLPBF 对比
详细并排对比 IPD042P03L3GATMA1 出自 Infineon 和 IRFR2405TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD042P03L3GATMA1 | IRFR2405TRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.28 | $0.55 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -30 V | 55 V |
| Continuous Drain Current (ID, Tc=25°C) | -70 A | — |
| Pulsed Drain Current (IDM) | -280 A | 200 A (typical, per datasheet family) |
| RDS(on) max @ VGS = -10 V | 4.2 mΩ | — |
| RDS(on) max @ VGS = -4.5 V | [DATA_NEEDED: RDS(on) @ -4.5 V] | — |
| Gate Threshold Voltage (VGS(th)) | -1.5 V (typ) | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Total Power Dissipation (PD @ Tc=25°C) | 150 W | — |
| Single-Pulse Avalanche Energy (EAS) | 290 mJ | — |
| 工作温度范围 | -55°C to +175°C (TJ) | -55 C to +175 C (junction) |
| 封装 | PG-TO252-3 (DPAK) | TO-252AA (DPAK), 3-pin (2 + Tab) |
| Technology | OptiMOS™ P (Trench) | HEXFET (IR MOSFET, 7th generation) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | — |
| MSL 等级 | 1 | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 56 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 16 mOhm |
| Gate Charge (Qg) typical | — | 70 nC |
| Power Dissipation (PD) at Tc | — | 110 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Avalanche Energy Rated | — | Yes (HEXFET ruggedized design) |
| Lead-Free / RoHS | — | Yes, PBF suffix indicates lead-free and RoHS compliant |
| Packaging | — | Tape & Reel (TR) |