IPD042P03L3GATMA1 vs IRFR2405TRLPBF Comparison
Detailed side-by-side comparison of IPD042P03L3GATMA1 by Infineon and IRFR2405TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD042P03L3GATMA1 | IRFR2405TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -30 V | 55 V |
| Continuous Drain Current (ID, Tc=25°C) | -70 A | — |
| Pulsed Drain Current (IDM) | -280 A | 200 A (typical, per datasheet family) |
| RDS(on) max @ VGS = -10 V | 4.2 mΩ | — |
| RDS(on) max @ VGS = -4.5 V | [DATA_NEEDED: RDS(on) @ -4.5 V] | — |
| Gate Threshold Voltage (VGS(th)) | -1.5 V (typ) | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Total Power Dissipation (PD @ Tc=25°C) | 150 W | — |
| Single-Pulse Avalanche Energy (EAS) | 290 mJ | — |
| Operating Temperature Range | -55°C to +175°C (TJ) | -55 C to +175 C (junction) |
| Package | PG-TO252-3 (DPAK) | TO-252AA (DPAK), 3-pin (2 + Tab) |
| Technology | OptiMOS™ P (Trench) | HEXFET (IR MOSFET, 7th generation) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | — |
| MSL Level | 1 | — |
| Transistor Type | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 56 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 16 mOhm |
| Gate Charge (Qg) typical | — | 70 nC |
| Power Dissipation (PD) at Tc | — | 110 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Avalanche Energy Rated | — | Yes (HEXFET ruggedized design) |
| Lead-Free / RoHS | — | Yes, PBF suffix indicates lead-free and RoHS compliant |
| Packaging | — | Tape & Reel (TR) |