IPD053N06NATMA1 vs IPC100N04S51R7ATMA1 Vergleich

Detaillierter Direktvergleich von IPD053N06NATMA1 von Infineon und IPC100N04S51R7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IPC100N04S51R7ATMA1 IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IPD053N06NATMA1 IPC100N04S51R7ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,52 $0,82
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 5 60V —
Transistor Polarity N-Channel —
Drain-Source Voltage (VDS) 60 V —
Gate-Source Voltage (VGS) +/- 20 V —
Continuous Drain Current (ID, Tc) 45 A —
Continuous Drain Current (ID, Ta) 18 A —
On-State Resistance (RDS(on), max) 5.3 mOhm @ VGS=10V —
Power Dissipation (Tc) 83 W —
Power Dissipation (Ta) 3 W —
Gehäuse PG-TO252-3 (DPAK-2), Surface Mount PG-TDSON-8-34 (SS08 leadless)
Betriebstemperaturbereich -55C to +175C (Tj) [DATA_NEEDED: precise operating range min/max from datasheet] —
Montageart Surface Mount Surface Mount
RoHS-Status Compliant Compliant (Green Product)
Technology OptiMOS 5 trench MOSFET —
Series — OptiMOS-5
Transistortyp — N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage VDS — 40 V
Continuous Drain Current ID — 100 A (at TC)
Pulsed Drain Current IDM — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage VGS — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) value]
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissipation PD — 115 W (at TC)
Thermal Resistance RthJC — 1.3 K/W
Betriebs-Sperrschichttemperatur — -55 °C to +175 °C
MSL-Level — MSL1 (260 °C peak reflow)
AEC-Q101 Qualified — Yes
Avalanche Tested — 100% tested
Built-in Body Diode — Yes

Datenblätter & Ressourcen

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