IPD053N06NATMA1 vs IPC100N04S51R7ATMA1 Comparison
Detailed side-by-side comparison of IPD053N06NATMA1 by Infineon and IPC100N04S51R7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC100N04S51R7ATMA1
IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon
IPC100N04S51R7ATMA1 β ActiveSpecification Comparison
| Parameter | IPD053N06NATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 60V | β |
| Transistor Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Gate-Source Voltage (VGS) | +/- 20 V | β |
| Continuous Drain Current (ID, Tc) | 45 A | β |
| Continuous Drain Current (ID, Ta) | 18 A | β |
| On-State Resistance (RDS(on), max) | 5.3 mOhm @ VGS=10V | β |
| Power Dissipation (Tc) | 83 W | β |
| Power Dissipation (Ta) | 3 W | β |
| Package | PG-TO252-3 (DPAK-2), Surface Mount | PG-TDSON-8-34 (SS08 leadless) |
| Operating Temperature Range | -55C to +175C (Tj) [DATA_NEEDED: precise operating range min/max from datasheet] | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant (Green Product) |
| Technology | OptiMOS 5 trench MOSFET | β |
| Series | β | OptiMOS-5 |
| Transistor Type | β | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage VDS | β | 40 V |
| Continuous Drain Current ID | β | 100 A (at TC) |
| Pulsed Drain Current IDM | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | β | 115 W (at TC) |
| Thermal Resistance RthJC | β | 1.3 K/W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| MSL Level | β | MSL1 (260 Β°C peak reflow) |
| AEC-Q101 Qualified | β | Yes |
| Avalanche Tested | β | 100% tested |
| Built-in Body Diode | β | Yes |