IPD053N06NATMA1 vs IPC100N04S51R7ATMA1 Comparación
Comparación detallada lado a lado de IPD053N06NATMA1 por Infineon y IPC100N04S51R7ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPD053N06NATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,52 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 60V | — |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Gate-Source Voltage (VGS) | +/- 20 V | — |
| Continuous Drain Current (ID, Tc) | 45 A | — |
| Continuous Drain Current (ID, Ta) | 18 A | — |
| On-State Resistance (RDS(on), max) | 5.3 mOhm @ VGS=10V | — |
| Power Dissipation (Tc) | 83 W | — |
| Power Dissipation (Ta) | 3 W | — |
| Encapsulado | PG-TO252-3 (DPAK-2), Surface Mount | PG-TDSON-8-34 (SS08 leadless) |
| Rango de temperatura de funcionamiento | -55C to +175C (Tj) [DATA_NEEDED: precise operating range min/max from datasheet] | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant (Green Product) |
| Technology | OptiMOS 5 trench MOSFET | — |
| Series | — | OptiMOS-5 |
| Tipo de transistor | — | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage VDS | — | 40 V |
| Continuous Drain Current ID | — | 100 A (at TC) |
| Pulsed Drain Current IDM | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | — | 115 W (at TC) |
| Thermal Resistance RthJC | — | 1.3 K/W |
| Temperatura de unión de funcionamiento | — | -55 °C to +175 °C |
| Nivel MSL | — | MSL1 (260 °C peak reflow) |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% tested |
| Built-in Body Diode | — | Yes |