IPD35N10S3L26ATMA2 vs IPD70N10S312ATMA2 Vergleich
Detaillierter Direktvergleich von IPD35N10S3L26ATMA2 von Infineon und IPD70N10S312ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD70N10S312ATMA2 - 100V 70A N-Ch OptiMOS Power MOSFET | Infineon
IPD70N10S312ATMA2 ✓ AktivSpezifikationsvergleich
| Parameter | IPD35N10S3L26ATMA2 | IPD70N10S312ATMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,05 | $0,69 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 35 A | 70 A |
| On-Resistance R<sub>DS(on)</sub> max | 24 mOhm | — |
| Power Dissipation (Ptot, Tc) | 71 W | — |
| Gate Threshold V<sub>GS(th)</sub> | [DATA_NEEDED: gate threshold typical/range] | — |
| Betriebstemperaturbereich | [DATA_NEEDED: Tj min/max] | -55C to +175C |
| Gehäuse | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) |
| Pin-Anzahl | 3 (Drain, Source, Gate + tab) | 3 (Gate, Drain, Source) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| Technology | Trench MOSFET (OptiMOS-T) | OptiMOS-T Power-MOSFET (N-Channel) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (unlimited floor life) |
| Part Number | — | IPD70N10S312ATMA2 |
| Power Dissipation (Ptot, Tc=25C) | — | 125 W |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: typical RDS(on) at VGS=10V] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Channel Type | — | N-Channel Enhancement Mode |
| Avalanche Rated | — | Yes |