IPD50P04P4L11ATMA2 vs IRFR5305TRPBF Vergleich

Detaillierter Direktvergleich von IPD50P04P4L11ATMA2 von Infineon und IRFR5305TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IPD50P04P4L11ATMA2 IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon

IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon

IPD50P04P4L11ATMA2 ✓ Aktiv

Spezifikationsvergleich

Parameter IPD50P04P4L11ATMA2 IRFR5305TRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,82 $0,32
Transistortyp P-Channel MOSFET, enhancement mode —
Drain-Source Voltage VDS -40 V —
Continuous Drain Current ID (TC = 25 °C) -50 A —
On-State Resistance RDS(on) (VGS = -10 V) 10.6 mΩ typical —
Gate-Source Voltage VGS (max) ±20 V —
Gate Threshold Voltage VGS(th) -1.0 V to -2.5 V typical —
Typical Gate Charge Qg 45 nC —
Power Dissipation PD (TC = 25 °C) 58 W —
Betriebs-Sperrschichttemperatur -55 °C to +175 °C —
Gehäuse PG-TO252-3-313 (DPAK), surface mount TO-252AA (DPAK)
Pin-Anzahl 3 (Drain / Tab / Source / Gate) —
Montageart Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
RoHS Compliance Compliant —
MSL-Level [DATA_NEEDED: MSL rating] 1
Polarity — P-Channel
Drain-Source Voltage (VDS) Max — -55 V
Continuous Drain Current (ID) at TC=25C — 31 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
On-Resistance (RDS(on)) Max at VGS=-10V — 65 mOhm
Gate-Source Threshold Voltage (VGS(th)) — -2 V to -4 V
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25C — 110 W
Single-Pulse Avalanche Energy (EAS) — 270 mJ
Betriebstemperaturbereich — -55 C to +175 C
Technology — HEXFET (IR MOSFET)
RoHS-Status — Compliant (Pb-free PBF suffix)
Lead-Free Finish — Yes (PBF suffix)

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