IPD60R145CFD7ATMA1 vs IPD60R385CPATMA1 Vergleich
Detaillierter Direktvergleich von IPD60R145CFD7ATMA1 von Infineon und IPD60R385CPATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPD60R145CFD7ATMA1 | IPD60R385CPATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,05 | $0,42 |
| FET Type | N-Channel | N-Channel |
| Technology | CoolMOS CFD7 (superjunction) | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 16 A (T<sub>C</sub> = 25C) | — |
| On-Resistance R<sub>DS(on)</sub> max | 145 mOhm | — |
| Power Dissipation (P<sub>D</sub>) | 83 W (T<sub>C</sub> = 25C) | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: Vth typical/min/max] | — |
| Gehäuse | TO-252AA (DPAK) surface mount | — |
| Body Diode | Integrated fast body diode (low Q<sub>rr</sub>) | — |
| Betriebstemperatur | -55C to +150C (junction) | — |
| Montageart | Surface Mount (DPAK, 3-pin + tab) | Surface Mount |
| Pin-Anzahl | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source; tab = Drain) |
| Series | CoolMOS CFD7 | CoolMOS™ CP (5th generation) |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Target Application | ZVS / LLC resonant converters, soft switching | — |
| Manufacturer | — | Infineon Technologies |
| Drain-Source Voltage (V(BR)DSS) | — | 600 V |
| Drain-Source On-Resistance (RDS(on)) | — | 385 mΩ (typ, VGS = 10 V) |
| Continuous Drain Current (ID) at TC=25°C | — | 9 A |
| Pulsed Drain Current (IDM) | — | 27 A |
| Power Dissipation (PD) at TC=25°C | — | 83 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) | — | 18 nC (typ) |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +150 °C |
| Gehäuse / Bauform | — | PG-TO252-3 (DPAK) |