IPD60R145CFD7ATMA1 vs IPD60R385CPATMA1 Comparación
Comparación detallada lado a lado de IPD60R145CFD7ATMA1 por Infineon y IPD60R385CPATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IPD60R145CFD7ATMA1 | IPD60R385CPATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,05 | $0,42 |
| FET Type | N-Channel | N-Channel |
| Technology | CoolMOS CFD7 (superjunction) | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 16 A (T<sub>C</sub> = 25C) | — |
| On-Resistance R<sub>DS(on)</sub> max | 145 mOhm | — |
| Power Dissipation (P<sub>D</sub>) | 83 W (T<sub>C</sub> = 25C) | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: Vth typical/min/max] | — |
| Encapsulado | TO-252AA (DPAK) surface mount | — |
| Body Diode | Integrated fast body diode (low Q<sub>rr</sub>) | — |
| Temperatura de funcionamiento | -55C to +150C (junction) | — |
| Tipo de montaje | Surface Mount (DPAK, 3-pin + tab) | Surface Mount |
| Recuento de pines | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source; tab = Drain) |
| Series | CoolMOS CFD7 | CoolMOS™ CP (5th generation) |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Estado RoHS | Compliant | Compliant |
| Target Application | ZVS / LLC resonant converters, soft switching | — |
| Manufacturer | — | Infineon Technologies |
| Drain-Source Voltage (V(BR)DSS) | — | 600 V |
| Drain-Source On-Resistance (RDS(on)) | — | 385 mΩ (typ, VGS = 10 V) |
| Continuous Drain Current (ID) at TC=25°C | — | 9 A |
| Pulsed Drain Current (IDM) | — | 27 A |
| Power Dissipation (PD) at TC=25°C | — | 83 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) | — | 18 nC (typ) |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Temperatura de unión de funcionamiento | — | -55 °C to +150 °C |
| Encapsulado / Carcasa | — | PG-TO252-3 (DPAK) |