IPD60R280P7SAUMA1 vs IPD70N10S312ATMA1 Vergleich

Detaillierter Direktvergleich von IPD60R280P7SAUMA1 von Infineon und IPD70N10S312ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPD60R280P7SAUMA1 IPD70N10S312ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,48 $0,92
Drain-Source Voltage (VDS) 600 V 100 V
Continuous Drain Current (ID, Tc) 12 A 70 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 180 A
Static Drain-Source On-Resistance (RDS(on)) 280 mΩ (typical) —
Gate-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) 4 V max @ ID = 190 µA [DATA_NEEDED: VGS(th)]
Total Power Dissipation (Ptot, Tc) 53 W —
Operating Junction Temperature (TJ) -40 °C to +150 °C —
Technology CoolMOS P7 Superjunction (SJ) N-channel —
Gehäuse PG-TO252-3 (DPAK) PG-TO252-3-11 (DPAK, 2 Leads + Tab)
Montageart Surface Mount Surface Mount
MSL-Level 1 MSL1 (up to 260 °C peak reflow)
Series CoolMOS P7 (7th generation, 600 V) —
RoHS-Status Compliant —
Integrated ESD Protection Yes —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IPD70N10S312ATMA1
Product Family — OptiMOS-T Power-Transistor
FET Type — N-Channel, Enhancement Mode
Power Dissipation (PD, Tc) — 125 W
On-State Resistance (RDS(on)) — 11.1 mΩ @ 70 A, 10 V VGS
Gate-Source Voltage (VGS) — ±20 V
Input Capacitance (Ciss) — 4355 pF @ 25 V
Total Gate Charge (Qg) — 65 nC @ 10 V
Operating Temperature (TJ) — -55 °C to +175 °C
Automotive Qualification — AEC-Q101
Avalanche Tested — 100 % (per datasheet)
RoHS Compliance — Green product, RoHS compliant

Datenblätter & Ressourcen

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