IPD60R380C6ATMA1 vs IPD60R280P7SAUMA1 Vergleich

Detaillierter Direktvergleich von IPD60R380C6ATMA1 von Infineon und IPD60R280P7SAUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPD60R380C6ATMA1 IPD60R280P7SAUMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,41 $0,48
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID) at TC=25C 10.6 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 380 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] 4 V max @ ID = 190 µA
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at TC=25C 83 W —
Operating Junction Temperature (TJ) -55C to +150C -40 °C to +150 °C
Storage Temperature [DATA_NEEDED: storage temperature] —
Technology CoolMOS C6 Superjunction CoolMOS P7 Superjunction (SJ) N-channel
FET Type N-Channel —
Gehäuse PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Montageart Surface Mount Surface Mount
MSL-Level [DATA_NEEDED: MSL level] 1
RoHS-Status Compliant Compliant
Drain-Tab Connection Exposed pad (electrically connected to drain) —
Continuous Drain Current (ID, Tc) — 12 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) — 280 mΩ (typical)
Gate-Source Voltage (VGS) Max — ±20 V
Total Power Dissipation (Ptot, Tc) — 53 W
Series — CoolMOS P7 (7th generation, 600 V)
Integrated ESD Protection — Yes

Datenblätter & Ressourcen

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