IPD60R380C6ATMA1 vs IPD60R280P7SAUMA1 Comparison
Detailed side-by-side comparison of IPD60R380C6ATMA1 by Infineon and IPD60R280P7SAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD60R380C6ATMA1 | IPD60R280P7SAUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at TC=25C | 10.6 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | 380 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | 4 V max @ ID = 190 µA |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at TC=25C | 83 W | — |
| Operating Junction Temperature (TJ) | -55C to +150C | -40 °C to +150 °C |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Technology | CoolMOS C6 Superjunction | CoolMOS P7 Superjunction (SJ) N-channel |
| FET Type | N-Channel | — |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL level] | 1 |
| RoHS Status | Compliant | Compliant |
| Drain-Tab Connection | Exposed pad (electrically connected to drain) | — |
| Continuous Drain Current (ID, Tc) | — | 12 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 280 mΩ (typical) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Total Power Dissipation (Ptot, Tc) | — | 53 W |
| Series | — | CoolMOS P7 (7th generation, 600 V) |
| Integrated ESD Protection | — | Yes |