IPD60R600P7ATMA1 vs IPL60R060CFD7AUMA1 Vergleich

Detaillierter Direktvergleich von IPD60R600P7ATMA1 von Infineon und IPL60R060CFD7AUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IPD60R600P7ATMA1 IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon

IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon

IPD60R600P7ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IPD60R600P7ATMA1 IPL60R060CFD7AUMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,71 $4,03
Part Number IPD60R600P7ATMA1 —
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 CoolMOS™ CFD7
Transistortyp N-Channel MOSFET N-Channel MOSFET
Technology Superjunction (SJ) / CoolMOS —
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, TC) 6 A —
On-Resistance (RDS(on)) 490 mOhm (max) —
Power Dissipation (PD, TC) 30 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Betriebstemperaturbereich -55C to +150C (TJ) -40 °C to +150 °C
Gehäuse / Bauform PG-TO252-3 (DPAK), surface mount —
Montageart Surface Mount Surface Mount
MSL-Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL Level]
RoHS-Status Compliant Compliant
Generation CoolMOS 7th generation (P7, successor to P6) —
Ordering Code Suffix ATMA1 = Tape & Reel, 13-inch —
Drain-Source Voltage (V_DS) — 600 V
Continuous Drain Current (I_D, Tc) — 40 A
Power Dissipation (P_D, Tc) — 219 W
R_DS(on) (max) at V_GS = 10 V — 60 mΩ
R_DS(on) (typ, datasheet) — 48 mΩ
Gate Charge (Q_G, typ) at V_GS = 10 V — 79 nC
Input Capacitance (C_iss) — 3193 pF
Output Capacitance (C_oss) — 62 pF
Gate-Source Voltage (V_GS) — ±20 V (max)
Gate Threshold Voltage (V_GS(th), typ) — 4.5 V
Gehäuse — PG-VSON-4-1 (Surface Mount)

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