IPD70N10S312ATMA2 vs IPB020N10N5LFATMA1 Vergleich
Detaillierter Direktvergleich von IPD70N10S312ATMA2 von Infineon und IPB020N10N5LFATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD70N10S312ATMA2 - 100V 70A N-Ch OptiMOS Power MOSFET | Infineon
IPD70N10S312ATMA2 ✓ AktivInfineon
IPB020N10N5LFATMA1 - 100V 176A 2mΩ OptiMOS 5 Linear FET | Infineon
IPB020N10N5LFATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPD70N10S312ATMA2 | IPB020N10N5LFATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,69 | $2,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD70N10S312ATMA2 | — |
| Technology | OptiMOS-T Power-MOSFET (N-Channel) | N-Channel Enhancement-Mode Power MOSFET |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc) | 70 A | — |
| Power Dissipation (Ptot, Tc=25C) | 125 W | — |
| On-State Resistance RDS(on) | [DATA_NEEDED: typical RDS(on) at VGS=10V] | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Betriebstemperaturbereich | -55C to +175C | -55 °C to +175 °C |
| Gehäuse | PG-TO252-3-11 (DPAK) | PG-TO263-3 (D2PAK) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (Gate, Drain, Source) | — |
| Channel Type | N-Channel Enhancement Mode | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (unlimited floor life) | 1 |
| Avalanche Rated | Yes | — |
| Product Family | — | OptiMOS 5 Linear FET |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (Tc) | — | 176 A |
| Silicon-Limited Drain Current | — | 289 A |
| Package-Limited Drain Current | — | 120 A |
| Pulsed Drain Current (VDS=56V, tp=10ms) | — | 10.2 A |
| On-State Resistance RDS(on) max | — | 2.0 mΩ |
| Total Power Dissipation (Tc) | — | 313 W |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V |
| Marking Code | — | 020N10LF |