IPD70N10S3L12ATMA1 vs IPB35N10S3L26ATMA1 Vergleich
Detaillierter Direktvergleich von IPD70N10S3L12ATMA1 von Infineon und IPB35N10S3L26ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD70N10S3L12ATMA1 | IPB35N10S3L26ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $1,15 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T | OptiMOS-T |
| Transistortyp | N-Channel MOSFET (Enhancement Mode) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc) | 70 A | — |
| Pulsed Drain Current (IDM) | 180 A | — |
| Power Dissipation (Ptot, Tc) | 125 W | — |
| On-State Resistance RDS(on) typ @ VGS=10V | 11.5 mΩ | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (junction) | — |
| Gehäuse | PG-TO252-3-11 (DPAK) | — |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (Drain, Gate, Source + tab) | 3 (Gate, Drain, Source) |
| MSL-Level | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Rating | 100 % avalanche tested | — |
| RoHS-Status | Compliant (Green Product) | [DATA_NEEDED: RoHS status] |
| Avalanche Energy (Single Pulse) | [DATA_NEEDED: EAS value] | — |
| Channel Type | — | N-Channel |
| Maximum Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC | — | 35 A |
| Power Dissipation (PD) at TC | — | 71 W |
| Package Type | — | PG-TO263-3 (D2PAK-2) |
| Channel Mode | — | Enhancement |
| RDS(on) (typical per Infineon product page) | — | 26.3 mΩ |
| Typical Gate Charge Qg @ Vgs | — | 80 nC |
| Maximum Drain-Source Resistance Rds | — | 1.7 mΩ (per RS Components listing) |
| Minimum Operating Temperature | — | -55 C |
| Maximum Power Dissipation Pd | — | 81 W (per RS Components listing) |
| AEC-Q101 Qualification | — | [DATA_NEEDED: AEC-Q101 qualification status] |