IPD70N10S3L12ATMA1 vs IPB35N10S3L26ATMA1 比較
詳細な並列比較: IPD70N10S3L12ATMA1 メーカー: Infineon および IPB35N10S3L26ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPD70N10S3L12ATMA1 | IPB35N10S3L26ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.78 | $1.15 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T | OptiMOS-T |
| トランジスタタイプ | N-Channel MOSFET (Enhancement Mode) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc) | 70 A | — |
| Pulsed Drain Current (IDM) | 180 A | — |
| Power Dissipation (Ptot, Tc) | 125 W | — |
| On-State Resistance RDS(on) typ @ VGS=10V | 11.5 mΩ | — |
| 動作温度範囲 | -55 °C to +175 °C (junction) | — |
| パッケージ | PG-TO252-3-11 (DPAK) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| ピン数 | 3 (Drain, Gate, Source + tab) | 3 (Gate, Drain, Source) |
| MSLレベル | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Rating | 100 % avalanche tested | — |
| RoHS ステータス | Compliant (Green Product) | [DATA_NEEDED: RoHS status] |
| Avalanche Energy (Single Pulse) | [DATA_NEEDED: EAS value] | — |
| Channel Type | — | N-Channel |
| Maximum Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC | — | 35 A |
| Power Dissipation (PD) at TC | — | 71 W |
| Package Type | — | PG-TO263-3 (D2PAK-2) |
| Channel Mode | — | Enhancement |
| RDS(on) (typical per Infineon product page) | — | 26.3 mΩ |
| Typical Gate Charge Qg @ Vgs | — | 80 nC |
| Maximum Drain-Source Resistance Rds | — | 1.7 mΩ (per RS Components listing) |
| Minimum Operating Temperature | — | -55 C |
| Maximum Power Dissipation Pd | — | 81 W (per RS Components listing) |
| AEC-Q101 Qualification | — | [DATA_NEEDED: AEC-Q101 qualification status] |