IPD70N10S3L12ATMA1 vs IPB35N10S3L26ATMA1 Comparison
Detailed side-by-side comparison of IPD70N10S3L12ATMA1 by Infineon and IPB35N10S3L26ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPB35N10S3L26ATMA1 β ActiveSpecification Comparison
| Parameter | IPD70N10S3L12ATMA1 | IPB35N10S3L26ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $1.15 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T | OptiMOS-T |
| Transistor Type | N-Channel MOSFET (Enhancement Mode) | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, Tc) | 70 A | β |
| Pulsed Drain Current (IDM) | 180 A | β |
| Power Dissipation (Ptot, Tc) | 125 W | β |
| On-State Resistance RDS(on) typ @ VGS=10V | 11.5 mΞ© | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (junction) | β |
| Package | PG-TO252-3-11 (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Drain, Gate, Source + tab) | 3 (Gate, Drain, Source) |
| MSL Level | MSL1 (per JEDEC J-STD-020, up to 260 Β°C peak reflow) | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| Avalanche Rating | 100 % avalanche tested | β |
| RoHS Status | Compliant (Green Product) | [DATA_NEEDED: RoHS status] |
| Avalanche Energy (Single Pulse) | [DATA_NEEDED: EAS value] | β |
| Channel Type | β | N-Channel |
| Maximum Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC | β | 35 A |
| Power Dissipation (PD) at TC | β | 71 W |
| Package Type | β | PG-TO263-3 (D2PAK-2) |
| Channel Mode | β | Enhancement |
| RDS(on) (typical per Infineon product page) | β | 26.3 mΞ© |
| Typical Gate Charge Qg @ Vgs | β | 80 nC |
| Maximum Drain-Source Resistance Rds | β | 1.7 mΞ© (per RS Components listing) |
| Minimum Operating Temperature | β | -55 C |
| Maximum Power Dissipation Pd | β | 81 W (per RS Components listing) |
| AEC-Q101 Qualification | β | [DATA_NEEDED: AEC-Q101 qualification status] |