IPD70N10S3L12ATMA1 vs IPD082N10N3GATMA1 Vergleich
Detaillierter Direktvergleich von IPD70N10S3L12ATMA1 von Infineon und IPD082N10N3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPD70N10S3L12ATMA1 | IPD082N10N3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $1,14 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T | — |
| Transistortyp | N-Channel MOSFET (Enhancement Mode) | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 70 A | — |
| Pulsed Drain Current (IDM) | 180 A | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot, Tc) | 125 W | — |
| On-State Resistance RDS(on) typ @ VGS=10V | 11.5 mΩ | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (junction) | — |
| Gehäuse | PG-TO252-3-11 (DPAK) | — |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (Drain, Gate, Source + tab) | 3 (Gate, Drain, Source) |
| MSL-Level | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Rating | 100 % avalanche tested | — |
| RoHS-Status | Compliant (Green Product) | Compliant |
| Avalanche Energy (Single Pulse) | [DATA_NEEDED: EAS value] | — |
| Part Number | — | IPD082N10N3GATMA1 |
| Technology | — | OptiMOS 3 (Trench N-Channel) |
| Continuous Drain Current (ID) @ Tc=25°C | — | 80 A |
| On-Resistance RDS(on) max @ VGS=10 V | — | 8.2 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) @ Tc=25°C | — | 125 W |
| Betriebs-Sperrschichttemperatur | — | -55°C to +175°C |
| Gehäuse / Bauform | — | PG-TO252-3 (DPAK), surface mount |
| Automotive Qualified (AEC-Q101) | — | Not applicable (industrial/consumer grade) |
| Lead-Free | — | Yes |