IPD70R1K4P7SAUMA1 vs IAUC100N04S6L020ATMA1 Vergleich
Detaillierter Direktvergleich von IPD70R1K4P7SAUMA1 von Infineon und IAUC100N04S6L020ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L020ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPD70R1K4P7SAUMA1 | IAUC100N04S6L020ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,52 | $0,86 |
| Manufacturer | Infineon Technologies | — |
| Part Family | CoolMOS P7 (700V Superjunction) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 700 V | — |
| Continuous Drain Current (ID) at Tc=25C | 4 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max at VGS=10V, ID | 1.4 ohm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Power Dissipation (Ptot) at Tc=25C | 23 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +150C | — |
| Gehäuse | PG-TO252-3 (DPAK) | PG-TDSON-8 (SS08, 5x6 mm leadless) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (Gate, Drain, Source) | — |
| Technology | Superjunction (CoolMOS P7) | OptiMOS 6 |
| Avalanche Energy Rated | Yes (100% avalanche tested) | — |
| ESD Protection | Integrated (per datasheet) | — |
| RoHS-Status | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-Source Breakdown Voltage V(BR)DSS | — | 40 V |
| Continuous Drain Current (Tc) | — | 100 A |
| Power Dissipation (Tc) | — | 75 W |
| RDS(on) Maximum @ VGS=10V, ID=50A | — | 2.04 mΩ |
| RDS(on) Typical | — | 2.0 mΩ |
| Gate-Source Voltage VGS (max) | — | ±20 V |
| Gate Threshold Voltage VGS(th) Typical | — | 2.0 V |
| Betriebstemperaturbereich | — | -55 °C to +175 °C (TJ) |
| Qualification | — | Automotive grade |
| Packaging | — | Tape & Reel (TMA1) |