IPD70R1K4P7SAUMA1 vs IAUC100N04S6L020ATMA1 비교
다음의 상세 나란히 비교: IPD70R1K4P7SAUMA1 제조: Infineon 및 IAUC100N04S6L020ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L020ATMA1 ✓ 활성사양 비교
| 파라미터 | IPD70R1K4P7SAUMA1 | IAUC100N04S6L020ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.52 | $0.86 |
| Manufacturer | Infineon Technologies | — |
| Part Family | CoolMOS P7 (700V Superjunction) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 700 V | — |
| Continuous Drain Current (ID) at Tc=25C | 4 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max at VGS=10V, ID | 1.4 ohm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Power Dissipation (Ptot) at Tc=25C | 23 W | — |
| 동작 접합 온도 | -55C to +150C | — |
| 패키지 | PG-TO252-3 (DPAK) | PG-TDSON-8 (SS08, 5x6 mm leadless) |
| 실장 유형 | Surface Mount | Surface Mount |
| 핀 수 | 3 (Gate, Drain, Source) | — |
| Technology | Superjunction (CoolMOS P7) | OptiMOS 6 |
| Avalanche Energy Rated | Yes (100% avalanche tested) | — |
| ESD Protection | Integrated (per datasheet) | — |
| RoHS 상태 | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-Source Breakdown Voltage V(BR)DSS | — | 40 V |
| Continuous Drain Current (Tc) | — | 100 A |
| Power Dissipation (Tc) | — | 75 W |
| RDS(on) Maximum @ VGS=10V, ID=50A | — | 2.04 mΩ |
| RDS(on) Typical | — | 2.0 mΩ |
| Gate-Source Voltage VGS (max) | — | ±20 V |
| Gate Threshold Voltage VGS(th) Typical | — | 2.0 V |
| 동작 온도 범위 | — | -55 °C to +175 °C (TJ) |
| Qualification | — | Automotive grade |
| Packaging | — | Tape & Reel (TMA1) |