IPD80R280P7ATMA1 vs ISC011N04NM7VATMA1 Vergleich
Detaillierter Direktvergleich von IPD80R280P7ATMA1 von Infineon und ISC011N04NM7VATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD80R280P7ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,62 | $0,41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 | OptiMOS 7 Power-Transistor |
| Transistortyp | N-Channel MOSFET | — |
| Technology | Superjunction (CoolMOS P7) | Trench MOSFET, silicon |
| Drain-Source Voltage (V_DS) | 800 V | — |
| Continuous Drain Current (I_D, Tc) | 17 A | — |
| R_DS(on) max at V_GS=10V | 280 mOhm | — |
| Power Dissipation (P_D, Tc) | 101 W | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gehäuse | PG-TO252-3 (DPAK) | PG-TDSON-8 (source-down) |
| Montageart | Surface Mount | Surface Mount |
| Betriebs-Sperrschichttemperatur | -55C to +150C | — |
| ESD Protection | Integrated (per datasheet) | — |
| RoHS-Status | Compliant | — |
| Lead-Free | Yes | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | MSL 1 (per JEDEC J-STD-020) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| Betriebstemperaturbereich | — | -55 °C to +175 °C (TJ) |
| RoHS Compliance | — | Compliant (per Infineon product page) |