IPD80R280P7ATMA1 vs ISC011N04NM7VATMA1 Comparison

Detailed side-by-side comparison of IPD80R280P7ATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD80R280P7ATMA1 IPD80R280P7ATMA1 - 800V 280mOhm CoolMOS P7 MOSFET | Infineon

IPD80R280P7ATMA1 - 800V 280mOhm CoolMOS P7 MOSFET | Infineon

IPD80R280P7ATMA1 βœ“ Active
Infineon
ISC011N04NM7VATMA1

ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 βœ“ Active

Specification Comparison

Parameter IPD80R280P7ATMA1 ISC011N04NM7VATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.62 $0.41
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 OptiMOS 7 Power-Transistor
Transistor Type N-Channel MOSFET β€”
Technology Superjunction (CoolMOS P7) Trench MOSFET, silicon
Drain-Source Voltage (V_DS) 800 V β€”
Continuous Drain Current (I_D, Tc) 17 A β€”
R_DS(on) max at V_GS=10V 280 mOhm β€”
Power Dissipation (P_D, Tc) 101 W β€”
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max rating] β€”
Package PG-TO252-3 (DPAK) PG-TDSON-8 (source-down)
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55C to +150C β€”
ESD Protection Integrated (per datasheet) β€”
RoHS Status Compliant β€”
Lead-Free Yes β€”
MSL Level [DATA_NEEDED: MSL rating] MSL 1 (per JEDEC J-STD-020)
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID) at TA=25Β°C β€” 38 A
Continuous Drain Current (ID) at TC β€” 256 A
On-Resistance RDS(on) max @ VGS=10V β€” 1.1 mΞ©
Power Dissipation (TA) β€” 3 W
Power Dissipation (TC) β€” 136 W
Gate Threshold Voltage (Vth) β€” Up to 3.2 V
Short-Circuit Withstand β€” Yes (current-limited)
Operating Temperature Range β€” -55 Β°C to +175 Β°C (TJ)
RoHS Compliance β€” Compliant (per Infineon product page)

Datasheets & Resources

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