IPD80R600P7ATMA1 vs IPL60R105P7AUMA1 Vergleich
Detaillierter Direktvergleich von IPD80R600P7ATMA1 von Infineon und IPL60R105P7AUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPD80R600P7ATMA1 | IPL60R105P7AUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,92 | $0,82 |
| Drain-Source Voltage (VDS) | 800 V | 600 V |
| Continuous Drain Current (ID, Tc) | 8 A | — |
| Pulsed Drain Current (IDM) | 22 A | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on), max) | 600 mΩ at VGS=10V | — |
| Maximum Power Dissipation (Ptot) | 60 W (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 3 V (typical) | — |
| Maximum Gate-Source Voltage (VGS) | ±30 V | — |
| Avalanche Energy, Single Pulse (EAS) | 20 mJ | — |
| Avalanche Energy, Repetitive (EAR) | 0.17 mJ | — |
| Betriebstemperaturbereich | -55 C to +150 C | -55C to +150C |
| Gehäuse | PG-TO252-3 (DPAK) | PG-VSON-4 (4-pin SMD with exposed pad) |
| Montageart | Surface Mount | Surface Mount |
| Technology | CoolMOS P7 super-junction | Superjunction (SJ) N-Channel Power MOSFET |
| Polarity | N-Channel | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS P7 |
| On-Resistance (RDS(on)) max | — | 105 mΩ |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| Power Dissipation (Ptot) at Tc | — | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.5 V |
| Gate Charge (Qg) typ | — | 45 nC |
| Channel Type | — | N-Channel |
| RoHS-Status | — | Compliant |
| Halogenfrei | — | Yes |
| Lead-Free | — | Yes |