IPD90P04P4L04ATMA2 vs IPD35N10S3L26ATMA2 Vergleich
Detaillierter Direktvergleich von IPD90P04P4L04ATMA2 von Infineon und IPD35N10S3L26ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD90P04P4L04ATMA2 | IPD35N10S3L26ATMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,22 | $1,05 |
| Part Number | IPD90P04P4L04ATMA2 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Family | OptiMOS-P2 | — |
| Channel Type | P-Channel | — |
| Drain-Source Voltage (Vds) | -40 V | — |
| Continuous Drain Current (Id) at Tc=25C | -90 A | — |
| Power Dissipation (Pd) at Tc=25C | 125 W | — |
| On-State Resistance Rds(on) typ at Vgs=-10V | 4.3 mOhm | — |
| Gate Threshold Voltage Vgs(th) typ | [DATA_NEEDED: Vgs(th) typical value] | — |
| Maximum Junction Temperature | 175 C | — |
| Betriebstemperaturbereich | -55 C to +175 C | [DATA_NEEDED: Tj min/max] |
| Gehäuse | PG-TO252-3-313 (DPAK) | PG-TO252-3-11 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 3 (2 + Tab) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Product Family | — | OptiMOS-T |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 35 A |
| On-Resistance R<sub>DS(on)</sub> max | — | 24 mOhm |
| Power Dissipation (Ptot, Tc) | — | 71 W |
| Gate Threshold V<sub>GS(th)</sub> | — | [DATA_NEEDED: gate threshold typical/range] |
| Pin-Anzahl | — | 3 (Drain, Source, Gate + tab) |
| Technology | — | Trench MOSFET (OptiMOS-T) |
| Lead-Free | — | Yes |