IPG16N10S461AATMA1 vs BSC0902NSIATMA1 Vergleich

Detaillierter Direktvergleich von IPG16N10S461AATMA1 von Infineon und BSC0902NSIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPG16N10S461AATMA1 BSC0902NSIATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,82 $0,32
Manufacturer Infineon Technologies Infineon Technologies
Product Type Dual N-Channel MOSFET Array —
Technology OptiMOS™ trench —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 16 A —
On-Resistance R_DS(on) typ. 61 mΩ —
Total Power Dissipation (Ptot) 29 W (T_C = 25°C) —
Configuration 2 N-Channel (Dual, separate) —
Gate Threshold Voltage V_GS(th) typ. [DATA_NEEDED: gate threshold voltage] —
Maximum Junction Temperature 175 °C —
Betriebstemperaturbereich -55 °C to +175 °C -55C to +150C (junction)
Gehäuse PG-TDSON-8-10 (Wettable Flank) PG-TDSON-8-6 (TDSON-8)
Montageart Surface Mount Surface Mount
Terminal Count 8 —
MSL-Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
RoHS-Status Compliant Compliant
Built-in Body Diode Yes —
Channel Mode Enhancement —
Product Family — OptiMOS 30V
Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TA=25C — 23 A
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-State Resistance RDS(on) Max at VGS=10V — 2.8 mOhm
Gate Charge QG(0V..10V) — 24 nC
Output Charge QOSS — 17 nC
Power Dissipation (TA) — 2.5 W
Power Dissipation (TC) — 48 W
Built-in Diode — Yes (single with built-in diode)
Lead-Free — Yes
Halogenfrei — Yes

Datenblätter & Ressourcen

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