IPG16N10S461AATMA1 vs BSC0902NSIATMA1 Сравнение
Подробное сравнение бок о бок IPG16N10S461AATMA1 от Infineon и BSC0902NSIATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPG16N10S461AATMA1 - Dual N-Ch 100V 16A 61mΩ MOSFET | Infineon
IPG16N10S461AATMA1 ✓ АктивенСравнение характеристик
| Параметр | IPG16N10S461AATMA1 | BSC0902NSIATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,82 | $0,32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Type | Dual N-Channel MOSFET Array | — |
| Technology | OptiMOS™ trench | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 16 A | — |
| On-Resistance R_DS(on) typ. | 61 mΩ | — |
| Total Power Dissipation (Ptot) | 29 W (T_C = 25°C) | — |
| Configuration | 2 N-Channel (Dual, separate) | — |
| Gate Threshold Voltage V_GS(th) typ. | [DATA_NEEDED: gate threshold voltage] | — |
| Maximum Junction Temperature | 175 °C | — |
| Диапазон рабочих температур | -55 °C to +175 °C | -55C to +150C (junction) |
| Корпус | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8-6 (TDSON-8) |
| Тип монтажа | Surface Mount | Surface Mount |
| Terminal Count | 8 | — |
| Уровень MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Статус RoHS | Compliant | Compliant |
| Built-in Body Diode | Yes | — |
| Channel Mode | Enhancement | — |
| Product Family | — | OptiMOS 30V |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TA=25C | — | 23 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-State Resistance RDS(on) Max at VGS=10V | — | 2.8 mOhm |
| Gate Charge QG(0V..10V) | — | 24 nC |
| Output Charge QOSS | — | 17 nC |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 48 W |
| Built-in Diode | — | Yes (single with built-in diode) |
| Lead-Free | — | Yes |
| Без галогенов | — | Yes |