IPG16N10S461AATMA1 vs BSC0902NSIATMA1 Comparación
Comparación detallada lado a lado de IPG16N10S461AATMA1 por Infineon y BSC0902NSIATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPG16N10S461AATMA1 | BSC0902NSIATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,82 | $0,32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Type | Dual N-Channel MOSFET Array | — |
| Technology | OptiMOS™ trench | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 16 A | — |
| On-Resistance R_DS(on) typ. | 61 mΩ | — |
| Total Power Dissipation (Ptot) | 29 W (T_C = 25°C) | — |
| Configuration | 2 N-Channel (Dual, separate) | — |
| Gate Threshold Voltage V_GS(th) typ. | [DATA_NEEDED: gate threshold voltage] | — |
| Maximum Junction Temperature | 175 °C | — |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C | -55C to +150C (junction) |
| Encapsulado | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8-6 (TDSON-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Terminal Count | 8 | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Estado RoHS | Compliant | Compliant |
| Built-in Body Diode | Yes | — |
| Channel Mode | Enhancement | — |
| Product Family | — | OptiMOS 30V |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TA=25C | — | 23 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-State Resistance RDS(on) Max at VGS=10V | — | 2.8 mOhm |
| Gate Charge QG(0V..10V) | — | 24 nC |
| Output Charge QOSS | — | 17 nC |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 48 W |
| Built-in Diode | — | Yes (single with built-in diode) |
| Lead-Free | — | Yes |
| Sin halógenos | — | Yes |