IPG20N06S415ATMA2 vs BSC050N04LSGATMA1 Vergleich
Detaillierter Direktvergleich von IPG20N06S415ATMA2 von Infineon und BSC050N04LSGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPG20N06S415ATMA2 | BSC050N04LSGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,41 |
| Technology | Dual N-channel enhancement-mode MOSFET | OptiMOS 3 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 20 A per channel | — |
| Total Power Dissipation (Ptot) | 50 W | — |
| On-State Resistance R_DS(on) | 15.5 mOhm max at V_GS = 10 V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Betriebstemperaturbereich | -55 C to +175 C | -55C to +150C |
| Gehäuse | PG-TDSON-8-4 (Dual Super S08) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (260 C peak reflow) | 1 |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100% avalanche tested | — |
| RoHS-Status | RoHS compliant (Green Product) | Compliant |
| Configuration | Dual N-channel array | — |
| Channel Type | N-Channel (Normal Level) | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: V_GS(th) typical value] | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |