IPG20N06S415ATMA2 vs BSC050N04LSGATMA1 Comparison
Detailed side-by-side comparison of IPG20N06S415ATMA2 by Infineon and BSC050N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPG20N06S415ATMA2
IPG20N06S415ATMA2 - Dual N-Ch 60V 20A MOSFET | Infineon
IPG20N06S415ATMA2 β ActiveInfineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | IPG20N06S415ATMA2 | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.41 |
| Technology | Dual N-channel enhancement-mode MOSFET | OptiMOS 3 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) | 20 A per channel | β |
| Total Power Dissipation (Ptot) | 50 W | β |
| On-State Resistance R_DS(on) | 15.5 mOhm max at V_GS = 10 V | β |
| Gate-Source Voltage (VGS) | +/-20 V | β |
| Operating Temperature Range | -55 C to +175 C | -55C to +150C |
| Package | PG-TDSON-8-4 (Dual Super S08) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (260 C peak reflow) | 1 |
| Automotive Qualification | AEC-Q101 qualified | β |
| Avalanche Tested | 100% avalanche tested | β |
| RoHS Status | RoHS compliant (Green Product) | Compliant |
| Configuration | Dual N-channel array | β |
| Channel Type | N-Channel (Normal Level) | β |
| Gate Threshold V_GS(th) | [DATA_NEEDED: V_GS(th) typical value] | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 40 V |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current at 25C (ID, Ta) | β | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | β | 85 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 57 W |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Avalanche Energy Rated | β | Yes (single-pulse avalanche) |