IPG20N06S415ATMA2 vs BSC050N04LSGATMA1 Comparaison
Comparaison détaillée côte à côte de IPG20N06S415ATMA2 par Infineon et BSC050N04LSGATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPG20N06S415ATMA2 | BSC050N04LSGATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,78 | $0,41 |
| Technology | Dual N-channel enhancement-mode MOSFET | OptiMOS 3 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 20 A per channel | — |
| Total Power Dissipation (Ptot) | 50 W | — |
| On-State Resistance R_DS(on) | 15.5 mOhm max at V_GS = 10 V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Plage de température de fonctionnement | -55 C to +175 C | -55C to +150C |
| Boîtier | PG-TDSON-8-4 (Dual Super S08) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | MSL1 (260 C peak reflow) | 1 |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100% avalanche tested | — |
| Statut RoHS | RoHS compliant (Green Product) | Compliant |
| Configuration | Dual N-channel array | — |
| Channel Type | N-Channel (Normal Level) | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: V_GS(th) typical value] | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |