IPL60R060CFD7AUMA1 vs IPD60R600P7ATMA1 Vergleich

Detaillierter Direktvergleich von IPL60R060CFD7AUMA1 von Infineon und IPD60R600P7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IPD60R600P7ATMA1 IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon

IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon

IPD60R600P7ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IPL60R060CFD7AUMA1 IPD60R600P7ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $4,03 $0,71
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ CFD7 CoolMOS P7
Transistortyp N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (V_DS) 600 V —
Continuous Drain Current (I_D, Tc) 40 A —
Power Dissipation (P_D, Tc) 219 W —
R_DS(on) (max) at V_GS = 10 V 60 mΩ —
R_DS(on) (typ, datasheet) 48 mΩ —
Gate Charge (Q_G, typ) at V_GS = 10 V 79 nC —
Input Capacitance (C_iss) 3193 pF —
Output Capacitance (C_oss) 62 pF —
Gate-Source Voltage (V_GS) ±20 V (max) —
Gate Threshold Voltage (V_GS(th), typ) 4.5 V —
Betriebstemperaturbereich -40 °C to +150 °C -55C to +150C (TJ)
Gehäuse PG-VSON-4-1 (Surface Mount) —
Montageart Surface Mount Surface Mount
MSL-Level [DATA_NEEDED: MSL Level] 1 (per JEDEC J-STD-020)
RoHS-Status Compliant Compliant
Part Number — IPD60R600P7ATMA1
Technology — Superjunction (SJ) / CoolMOS
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, TC) — 6 A
On-Resistance (RDS(on)) — 490 mOhm (max)
Power Dissipation (PD, TC) — 30 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Gehäuse / Bauform — PG-TO252-3 (DPAK), surface mount
Generation — CoolMOS 7th generation (P7, successor to P6)
Ordering Code Suffix — ATMA1 = Tape & Reel, 13-inch

Datenblätter & Ressourcen

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