IPL60R060CFD7AUMA1 vs IPD60R600P7ATMA1 对比
详细并排对比 IPL60R060CFD7AUMA1 出自 Infineon 和 IPD60R600P7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPL60R060CFD7AUMA1 | IPD60R600P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.03 | $0.71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ CFD7 | CoolMOS P7 |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | 600 V | — |
| Continuous Drain Current (I_D, Tc) | 40 A | — |
| Power Dissipation (P_D, Tc) | 219 W | — |
| R_DS(on) (max) at V_GS = 10 V | 60 mΩ | — |
| R_DS(on) (typ, datasheet) | 48 mΩ | — |
| Gate Charge (Q_G, typ) at V_GS = 10 V | 79 nC | — |
| Input Capacitance (C_iss) | 3193 pF | — |
| Output Capacitance (C_oss) | 62 pF | — |
| Gate-Source Voltage (V_GS) | ±20 V (max) | — |
| Gate Threshold Voltage (V_GS(th), typ) | 4.5 V | — |
| 工作温度范围 | -40 °C to +150 °C | -55C to +150C (TJ) |
| 封装 | PG-VSON-4-1 (Surface Mount) | — |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | [DATA_NEEDED: MSL Level] | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant | Compliant |
| Part Number | — | IPD60R600P7ATMA1 |
| Technology | — | Superjunction (SJ) / CoolMOS |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, TC) | — | 6 A |
| On-Resistance (RDS(on)) | — | 490 mOhm (max) |
| Power Dissipation (PD, TC) | — | 30 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| 封装 / 外壳 | — | PG-TO252-3 (DPAK), surface mount |
| Generation | — | CoolMOS 7th generation (P7, successor to P6) |
| Ordering Code Suffix | — | ATMA1 = Tape & Reel, 13-inch |