IPL60R065P7AUMA1 vs BSC098N10NS5ATMA1 Vergleich
Detaillierter Direktvergleich von IPL60R065P7AUMA1 von Infineon und BSC098N10NS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPL60R065P7AUMA1 | BSC098N10NS5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,18 | $0,55 |
| Manufacturer | Infineon Technologies | — |
| Technology Family | CoolMOS™ P7 (superjunction) | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 °C) | 41 A | — |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 65 mΩ (max) | — |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 °C) | 201 W | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 3.5 V | — |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=400 V) | 2895 pF | — |
| Rise Time (t<sub>r</sub>) | 7 ns | — |
| Fall Time (t<sub>f</sub>) | 4 ns | — |
| Betriebstemperaturbereich | -55 °C to +150 °C (T<sub>j</sub>) | [DATA_NEEDED: Tj min/max] |
| Gehäuse | PG-VSON-4 (surface mount with exposed pad) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Anzahl der Pins | 4 | — |
| Montageart | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Polarity | Single N-channel | — |
| Drain to Source Voltage | 650 V (rating per AiEMA spec) | — |
| R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10 V, T<sub>j</sub>=25 °C) | 0.053 Ω | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 |
| Halogenfrei | Yes | — |
| Technology | — | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc=25C) | — | 60 A |
| Continuous Drain Current (ID, Ta) | — | [DATA_NEEDED: ID Ta-rated value] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=10V | — | 9.8 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max +/-] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25C) | — | 69 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Diode Continuous Forward Current (IS) | — | 63 A (Tc=25C) |
| Diode Pulse Current (IS,pulse) | — | 240 A (Tc=25C) |
| Diode Forward Voltage (VSD) typ | — | 0.9 V (IF=30 A, Tj=25C) |
| Diode Forward Voltage (VSD) max | — | 1.1 V (IF=30 A, Tj=25C) |
| Shipping Packaging | — | Tape & Reel (T/R) |