IPL60R065P7AUMA1 vs BSC098N10NS5ATMA1 비교
다음의 상세 나란히 비교: IPL60R065P7AUMA1 제조: Infineon 및 BSC098N10NS5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPL60R065P7AUMA1 | BSC098N10NS5ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.18 | $0.55 |
| Manufacturer | Infineon Technologies | — |
| Technology Family | CoolMOS™ P7 (superjunction) | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 °C) | 41 A | — |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 65 mΩ (max) | — |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 °C) | 201 W | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 3.5 V | — |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=400 V) | 2895 pF | — |
| Rise Time (t<sub>r</sub>) | 7 ns | — |
| Fall Time (t<sub>f</sub>) | 4 ns | — |
| 동작 온도 범위 | -55 °C to +150 °C (T<sub>j</sub>) | [DATA_NEEDED: Tj min/max] |
| 패키지 | PG-VSON-4 (surface mount with exposed pad) | PG-TDSON-8-7 (SuperSO8 5x6) |
| 핀 수 | 4 | — |
| 실장 유형 | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Polarity | Single N-channel | — |
| Drain to Source Voltage | 650 V (rating per AiEMA spec) | — |
| R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10 V, T<sub>j</sub>=25 °C) | 0.053 Ω | — |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | 1 (per JEDEC J-STD-020) | 1 |
| 할로겐 프리 | Yes | — |
| Technology | — | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc=25C) | — | 60 A |
| Continuous Drain Current (ID, Ta) | — | [DATA_NEEDED: ID Ta-rated value] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=10V | — | 9.8 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max +/-] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25C) | — | 69 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Diode Continuous Forward Current (IS) | — | 63 A (Tc=25C) |
| Diode Pulse Current (IS,pulse) | — | 240 A (Tc=25C) |
| Diode Forward Voltage (VSD) typ | — | 0.9 V (IF=30 A, Tj=25C) |
| Diode Forward Voltage (VSD) max | — | 1.1 V (IF=30 A, Tj=25C) |
| Shipping Packaging | — | Tape & Reel (T/R) |