IPL60R065P7AUMA1 vs BSC098N10NS5ATMA1 Comparison
Detailed side-by-side comparison of IPL60R065P7AUMA1 by Infineon and BSC098N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R065P7AUMA1
IPL60R065P7AUMA1 - 600V 65mΞ© CoolMOS P7 MOSFET | Infineon
IPL60R065P7AUMA1 β ActiveInfineon
BSC098N10NS5ATMA1
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 β ActiveSpecification Comparison
| Parameter | IPL60R065P7AUMA1 | BSC098N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.18 | $0.55 |
| Manufacturer | Infineon Technologies | β |
| Technology Family | CoolMOSβ’ P7 (superjunction) | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 Β°C) | 41 A | β |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 65 mΞ© (max) | β |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 Β°C) | 201 W | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 3.5 V | β |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=400 V) | 2895 pF | β |
| Rise Time (t<sub>r</sub>) | 7 ns | β |
| Fall Time (t<sub>f</sub>) | 4 ns | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C (T<sub>j</sub>) | [DATA_NEEDED: Tj min/max] |
| Package | PG-VSON-4 (surface mount with exposed pad) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Number of Pins | 4 | β |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Type | N-Channel | β |
| Polarity | Single N-channel | β |
| Drain to Source Voltage | 650 V (rating per AiEMA spec) | β |
| R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10 V, T<sub>j</sub>=25 Β°C) | 0.053 Ξ© | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Halogen-Free | Yes | β |
| Technology | β | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID, Tc=25C) | β | 60 A |
| Continuous Drain Current (ID, Ta) | β | [DATA_NEEDED: ID Ta-rated value] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=10V | β | 9.8 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max +/-] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25C) | β | 69 W |
| Power Dissipation (Ta) | β | 2.5 W |
| Diode Continuous Forward Current (IS) | β | 63 A (Tc=25C) |
| Diode Pulse Current (IS,pulse) | β | 240 A (Tc=25C) |
| Diode Forward Voltage (VSD) typ | β | 0.9 V (IF=30 A, Tj=25C) |
| Diode Forward Voltage (VSD) max | β | 1.1 V (IF=30 A, Tj=25C) |
| Shipping Packaging | β | Tape & Reel (T/R) |