IPL60R115CFD7AUMA1 vs IAUC120N06S5L015ATMA1 Vergleich

Detaillierter Direktvergleich von IPL60R115CFD7AUMA1 von Infineon und IAUC120N06S5L015ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IPL60R115CFD7AUMA1 IPL60R115CFD7AUMA1 - 600V 22A CoolMOS CFD7 MOSFET | Infineon

IPL60R115CFD7AUMA1 - 600V 22A CoolMOS CFD7 MOSFET | Infineon

IPL60R115CFD7AUMA1 ✓ Aktiv
Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IPL60R115CFD7AUMA1 IAUC120N06S5L015ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,65 $0,92
Manufacturer Infineon Technologies —
Part Number IPL60R115CFD7AUMA1 —
Series CoolMOS CFD7 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 600 V 60 V
Continuous Drain Current (ID, Tc) 22 A —
On-Resistance (RDS(on)) 115 mOhm (typ, VGS=10V) —
Gehäuse / Bauform PG-VSON-4 (5x6 mm) with exposed pad —
Montageart Surface Mount Surface Mount (exposed pad)
Technology Superjunction MOSFET (CoolMOS CFD7) N-Channel MOSFET (OptiMOS 5)
Integrated Body Diode Yes - fast body diode (CFD) —
Application Resonant high-power topologies (LLC, PFC) —
Betriebstemperaturbereich [DATA_NEEDED: operating temperature range] -55C to +175C (Tj)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
RoHS-Status Compliant (per distributor listings) Compliant
Pin-Anzahl 4 —
Quantity per Reel [DATA_NEEDED: reel qty] —
Continuous Drain Current (ID, Tc=25C) — 235 A
On-Resistance RDS(on) max (VGS=10 V) — 1.5 mΩ
Gate Charge (Qg, typ) — 88 nC
Power Dissipation (PD, Tc=25C) — 167 W
Gehäuse — PG-TDSON-8-43 (Surface Mount)
Automotive Qualification — AEC-Q101 qualified
Gate-Source Voltage (VGS) max — ±20 V
MSL-Level — [DATA_NEEDED: MSL level]
Drain-Source On-State Resistance Test Conditions — VGS = 10 V, ID = 50 A
Typical Application — Automotive DC-DC, battery switches, motor drives

Datenblätter & Ressourcen

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