IPL60R115CFD7AUMA1 vs IAUC120N06S5L015ATMA1 对比

详细并排对比 IPL60R115CFD7AUMA1 出自 Infineon 和 IAUC120N06S5L015ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPL60R115CFD7AUMA1 IPL60R115CFD7AUMA1 - 600V 22A CoolMOS CFD7 MOSFET | Infineon

IPL60R115CFD7AUMA1 - 600V 22A CoolMOS CFD7 MOSFET | Infineon

IPL60R115CFD7AUMA1 ✓ 量产中
Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ 量产中

规格对比

参数 IPL60R115CFD7AUMA1 IAUC120N06S5L015ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.65 $0.92
Manufacturer Infineon Technologies —
Part Number IPL60R115CFD7AUMA1 —
Series CoolMOS CFD7 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 600 V 60 V
Continuous Drain Current (ID, Tc) 22 A —
On-Resistance (RDS(on)) 115 mOhm (typ, VGS=10V) —
封装 / 外壳 PG-VSON-4 (5x6 mm) with exposed pad —
安装类型 Surface Mount Surface Mount (exposed pad)
Technology Superjunction MOSFET (CoolMOS CFD7) N-Channel MOSFET (OptiMOS 5)
Integrated Body Diode Yes - fast body diode (CFD) —
Application Resonant high-power topologies (LLC, PFC) —
工作温度范围 [DATA_NEEDED: operating temperature range] -55C to +175C (Tj)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
RoHS 状态 Compliant (per distributor listings) Compliant
引脚数量 4 —
Quantity per Reel [DATA_NEEDED: reel qty] —
Continuous Drain Current (ID, Tc=25C) — 235 A
On-Resistance RDS(on) max (VGS=10 V) — 1.5 mΩ
Gate Charge (Qg, typ) — 88 nC
Power Dissipation (PD, Tc=25C) — 167 W
封装 — PG-TDSON-8-43 (Surface Mount)
Automotive Qualification — AEC-Q101 qualified
Gate-Source Voltage (VGS) max — ±20 V
MSL 等级 — [DATA_NEEDED: MSL level]
Drain-Source On-State Resistance Test Conditions — VGS = 10 V, ID = 50 A
Typical Application — Automotive DC-DC, battery switches, motor drives

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