IPL60R115CFD7AUMA1 vs IAUC120N06S5L015ATMA1 Comparación
Comparación detallada lado a lado de IPL60R115CFD7AUMA1 por Infineon y IAUC120N06S5L015ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPL60R115CFD7AUMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,65 | $0,92 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPL60R115CFD7AUMA1 | — |
| Series | CoolMOS CFD7 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 60 V |
| Continuous Drain Current (ID, Tc) | 22 A | — |
| On-Resistance (RDS(on)) | 115 mOhm (typ, VGS=10V) | — |
| Encapsulado / Carcasa | PG-VSON-4 (5x6 mm) with exposed pad | — |
| Tipo de montaje | Surface Mount | Surface Mount (exposed pad) |
| Technology | Superjunction MOSFET (CoolMOS CFD7) | N-Channel MOSFET (OptiMOS 5) |
| Integrated Body Diode | Yes - fast body diode (CFD) | — |
| Application | Resonant high-power topologies (LLC, PFC) | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | -55C to +175C (Tj) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Estado RoHS | Compliant (per distributor listings) | Compliant |
| Recuento de pines | 4 | — |
| Quantity per Reel | [DATA_NEEDED: reel qty] | — |
| Continuous Drain Current (ID, Tc=25C) | — | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | — | 1.5 mΩ |
| Gate Charge (Qg, typ) | — | 88 nC |
| Power Dissipation (PD, Tc=25C) | — | 167 W |
| Encapsulado | — | PG-TDSON-8-43 (Surface Mount) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Nivel MSL | — | [DATA_NEEDED: MSL level] |
| Drain-Source On-State Resistance Test Conditions | — | VGS = 10 V, ID = 50 A |
| Typical Application | — | Automotive DC-DC, battery switches, motor drives |