IPL65R070C7AUMA1 vs IPD60R280P7SAUMA1 Vergleich
Detaillierter Direktvergleich von IPL65R070C7AUMA1 von Infineon und IPD60R280P7SAUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPL65R070C7AUMA1 | IPD60R280P7SAUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,68 | $0,48 |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS C7 | CoolMOS P7 (7th generation, 600 V) |
| Technology | Superjunction N-Channel MOSFET | CoolMOS P7 Superjunction (SJ) N-channel |
| Drain-Source Voltage (VDS) | 650 V | 600 V |
| Continuous Drain Current (ID) at TC=25°C | 28 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 70 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | 4 V max @ ID = 190 µA |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD) at TC=25°C | 169 W | — |
| Avalanche Energy (EAS) | 171 mJ | — |
| Betriebs-Sperrschichttemperatur | -55°C to +150°C | — |
| Gehäuse | PG-VSON-4 (surface mount) | PG-TO252-3 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | — |
| Channel Type | N-Channel | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 |
| Continuous Drain Current (ID, Tc) | — | 12 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 280 mΩ (typical) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Total Power Dissipation (Ptot, Tc) | — | 53 W |
| Operating Junction Temperature (TJ) | — | -40 °C to +150 °C |
| Integrated ESD Protection | — | Yes |