IPL65R070C7AUMA1 vs IPD60R280P7SAUMA1 Comparação
Comparação detalhada lado a lado de IPL65R070C7AUMA1 por Infineon e IPD60R280P7SAUMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IPL65R070C7AUMA1 | IPD60R280P7SAUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,68 | $0,48 |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS C7 | CoolMOS P7 (7th generation, 600 V) |
| Technology | Superjunction N-Channel MOSFET | CoolMOS P7 Superjunction (SJ) N-channel |
| Drain-Source Voltage (VDS) | 650 V | 600 V |
| Continuous Drain Current (ID) at TC=25°C | 28 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 70 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | 4 V max @ ID = 190 µA |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD) at TC=25°C | 169 W | — |
| Avalanche Energy (EAS) | 171 mJ | — |
| Temperatura de junção de operação | -55°C to +150°C | — |
| Encapsulamento | PG-VSON-4 (surface mount) | PG-TO252-3 (DPAK) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | — |
| Channel Type | N-Channel | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Nível MSL | [DATA_NEEDED: MSL rating] | 1 |
| Continuous Drain Current (ID, Tc) | — | 12 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 280 mΩ (typical) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Total Power Dissipation (Ptot, Tc) | — | 53 W |
| Operating Junction Temperature (TJ) | — | -40 °C to +150 °C |
| Integrated ESD Protection | — | Yes |